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| STS6DNF30V DUAL N-CHANNEL 30V - 0.026 - 6A SO-8 2.5V-DRIVE STripFETTM II POWER MOSFET TYPE STS6DNF30V s s s s VDSS 30 V RDS(on) <0.030 (@4.5V) <0.038 (@2.5V) ID 6A TYPICAL RDS(on) = 0.026 (@4.5V) TYPICAL RDS(on) = 0.030 (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s BATTERY SAFETY UNIT IN NOMADIC EQUIPMENT s DC-DC CONVERTERS s POWER MANAGEMENT IN PORTABLE/ DESKTOP PCS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Single Operation Drain Current (continuos) at TC = 100C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25C Dual Operation Total Dissipation at TC = 25C Single Operation Value 30 30 12 6 3.8 24 2 1.6 Unit V V V A A A W W IDM (l) PTOT (q) Pulse width limited by safe operating area July 2002 1/8 STS6DNF30V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation Max. Operating Junction Temperature Storage Temperature 78 62.5 150 -65 to 150 C/W C/W C C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 12V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 4.5 V, ID = 3 A VGS = 2.5 V, ID = 3 A Min. 0.6 0.026 0.030 0.030 0.038 Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 15 800 180 32 Max. Unit S pF pF pF 2/8 STS6DNF30V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 3 A RG = 4.7 VGS = 2.5V (see test circuit, Figure 3) VDD = 15 V, ID = 6 A, VGS = 2.5 V Min. Typ. 20 25 6.8 2 3.4 9.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 10 V, ID = 3 A, RG = 4.7, VGS = 2.5 V (see test circuit, Figure 3) Min. Typ. 32 13 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A, VGS = 0 ISD = 6 A, di/dt = 100A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 5) 25 21 1.7 Test Conditions Min. Typ. Max. 6 24 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS6DNF30V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS6DNF30V Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS6DNF30V Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS6DNF30V SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS6DNF30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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